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  three phase pstd 82 i dav = 88 a rectifier bridge v rrm = 800-1800v (traction - pac tm ) features ? ? package with screw terminals ? isolation voltage 3000 v ? planar glass passivated chips ? blocking voltage up to 1800 v ? low forward voltage drop applications ? supplies for dc power equipment ? input rectifier for pwm inverter ? battery dc power supplies ? field supply for dc motors advantages ? easy to mount with two screws ? space and weight savings ? improved temperature and power cycling capability package style and outline dimensions in mm (1mm = 0.0394?) powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2005 powersem reserves the right to change limits, test conditions and dimensions v rsm v rrm type v dsm v drm (v) (v) 800 800 pstd 82/08 1200 1200 pstd 82/12 1400 1400 pstd 82/14 1600 1600 pstd 82/16 1800 1800 pstd 82/18 preliminary data sheet symbol test conditions maximum ratings i davm t c = 110 c, (per module) 88 a i fsm t vj = 45 c t = 10 ms (50 hz), sine 750 a v r = 0 t = 8.3 ms (60 hz), sine 820 a t vj = t vjm t = 10 ms (50 hz), sine 670 a v r = 0 t = 8.3 ms (60 hz), sine 740 a i 2 dt t vj = 45 c t = 10 ms (50 hz), sine 2800 a2s v r = 0 t = 8.3 ms (60 hz), sine 2800 a2s t vj = t vjm t = 10 ms (50 hz), sine 2250 a2s v r = 0 t = 8.3 ms (60 hz), sine 2250 a2s t vj -40... + 150 c t vjm 150 c t stg -40... + 125 c v isol 50/60 hz, rms t = 1 min 2500 v i isol 1 ma t = 1 s 3000 v m d mounting torque (m5) 5.0/44 nm/lb.in. terminal connection torque (m5) 3.0/26 nm/lb.in. weight typ. 170 g i r v r = v rrm, t vj = 25c 0.3 ma v r = v rrm, t vj = t vjm 5 ma v f i f = 150 a, t vj = 25 c 1.6 v v to for power-loss calculations only 0.8 v r t 5 m ? r thjc per diode; dc current 1.1 k/w per module 0.183 k/w r thjk per diode; dc current 1.52 k/w per module 0.253 k/w d s creeping distance on surface 10.0 mm d a creeping distance in air 9.4 mm a max. allowable acceleration 50 m/s2 data according to iec 60747 refer to a single diode unless otherwise stated symbol test conditions characteristic value
powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2005 powersem reserves the right to change limits, test conditions and dimensions fig.5 maximum forward current at case temperature fig. 4 power dissipation versus direct output current and ambient temperature fig. 3 i 2 dt versus time (1-10ms) per diode (or thyristor) fig. 2 surge overload current per diode i fsm : crest value. t: duration fig. 1 forward current versus voltage drop per diode fig. 6 transient thermal impedance per diode (or thyristor), calculated ? pstd 82 pstd 82


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